Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation

A manufacturing method of a semiconductor device, comprising:

• forming a semiconductor film comprising silicon over a substrate;
• forming at least one semiconductor island by patterning said semiconductor film;
• scanning said at least one semiconductor island comprising silicon over said substrate, with a pulsed linear laser beam having an elongated cross section and a fixed oscillation frequency by moving the substrate in a direction perpendicular to an elongation direction of said cross section at a fixed speed in in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon in a first chamber in an apparatus;
• and then
• forming a multilayer insulating film containing nitrogen on the semiconductor island in a second chamber in said apparatus, and
• wherein said at least one semiconductor island is not exposed to the air outside of the apparatus between said scanning step and said forming step.

A manufacturing method of a semiconductor device, comprising:

• forming a semiconductor film comprising silicon over a substrate;
• forming at least one semiconductor island by patterning said semiconductor film;
• scanning said substrate having said at least one semiconductor island with a pulsed linear laser beam having an elongated cross section and a fixed oscillation frequency in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon in a first chamber of an apparatus by moving the substrate in a direction perpendicular to an elongation direction of said cross section at a fixed speed at an atmospheric pressure in a first chamber of an apparatus;
• and then
• forming an insulating film comprising at least silicon and nitrogen on said semiconductor island in a second chamber of said apparatus, and
• wherein said at least one semiconductor island is not exposed to the air outside of said apparatus between said scanning step and said forming step.

A manufacturing method of a semiconductor device, comprising:

• forming a semiconductor film comprising silicon over a substrate;
• thermal annealing said semiconductor film;
• forming at least one semiconductor island by patterning said semiconductor film;
• scanning said substrate having said at least one semiconductor island with a pulsed linear laser beam having an elongated cross section in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon in a first chamber of an apparatus by moving the substrate in a direction perpendicular to an elongation direction of said cross section at a fixed speed and at an atmospheric pressure in a first chamber of an apparatus;
• forming a gate insulating film comprising at least silicon and nitrogen on said semiconductor island in a second chamber of an apparatus;
• and then
• forming a gate electrode adjacent to said semiconductor island with said gate insulating film interposed therebetween;
• and
• introducing impurities in at least one portion of said semiconductor island, and
• wherein said at least one semiconductor island is not exposed to the air outside of said apparatus between said scanning and said forming said gate insulating film.

A manufacturing method of a semiconductor device, comprising:

• forming at least one semiconductor film comprising silicon over a substrate;
• scanning said at least one semiconductor film over said substrate, with a laser beam in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon in a first chamber of an apparatus;
• and then
• forming an insulating film comprising at least silicon and nitrogen on said at least one semiconductor film in a second chamber of said apparatus, and
• wherein said at least one semiconductor film is not exposed to the air outside between said scanning step and said forming step.

A manufacturing method of a semiconductor device, comprising:

• forming a semiconductor film comprising silicon over a substrate;
• thermal annealing said semiconductor film;
• forming at least one semiconductor island by patterning said semiconductor film;
• scanning said at least one semiconductor island comprising silicon over said substrate, with a pulsed linear laser beam having an elongated cross section and a fixed oscillation frequency in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon by moving the substrate in a direction perpendicular to an elongation direction of said cross section at a fixed speed in a first chamber of an apparatus;
• and then
• forming an insulating film comprising at least silicon and nitrogen on said semiconductor island in a second chamber of said apparatus, and
• wherein said scanning and said forming are consecutively performed without exposing to an air outside of the apparatus.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor film comprising silicon over a substrate;
• crystallizing said semiconductor film by thermal annealing;
• forming at least one semiconductor island by patterning said crystallized semiconductor film;
• scanning said substrate and said semiconductor island with a pulsed linear laser beam having an elongated cross section in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon by moving the substrate in a direction perpendicular to an elongation direction of said cross section at a fixed speed at an atmospheric pressure in said first chamber;
• and then
• forming an insulating film comprising at least silicon and nitrogen on said at least one semiconductor island in a second chamber of an apparatus, and
• wherein said scanning step and said forming step are consecutively performed without exposing to an air outside of the apparatus.

A method of manufacturing a semiconductor device, comprising:

• forming at least one semiconductor film comprising silicon over a substrate;
• crystallizing said at least one semiconductor film by thermal annealing;
• scanning said substrate and said at least one semiconductor film with a linear laser beam in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon in said first chamber;
• and then
• treating said at least one semiconductor film with nitrogen in a second chamber of the apparatus, and
• wherein said scanning and said treating are consecutively performed without exposing to an air outside of the apparatus.

A method of manufacturing a semiconductor device, comprising:

• forming a semiconductor film comprising silicon over a substrate;
• crystallizing said semiconductor film by thermal annealing;
• forming at least one semiconductor island by patterning said crystallized semiconductor film;
• scanning said substrate and said at least one semiconductor island with a pulsed linear laser beat having an elongated cross section in an atmosphere comprising a mixture gas of hydrogen and at least one gas selected from a group consisting of air, nitrogen, helium, and argon by moving the substrate in a direction perpendicular to an elongation direction of said cross section at a fixed speed at an atmospheric pressure in said first chamber;
• forming a gate insulating film on said at least one semiconductor island by treating a surface of said semiconductor island with nitrogen in a second chamber of the apparatus, and then
• forming a gate electrode adjacent to said semiconductor island with a gate insulating film comprising at least silicon and nitrogen interposed therebetween;
• and
• introducing impurities in at least one portion of said semiconductor island, and
• wherein said scanning step and said treating step are consecutively performed without exposing to an air outside of the apparatus.