Semiconductor laser diode including ridge wave guide and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsJoon-seop Kwak, Jae-hee Cho
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Abstract
A semiconductor laser diode having a ridge wave guide and a method of manufacturing the same are provided. The semiconductor laser diode in which a ridge protruding perpendicularly to an active layer is formed in one of first and second material layers in which stimulated emission occurs, the first and second material layers being formed over and under the active layer, respectively, and having lower refractive indices than the active layer, the semiconductor laser diode contacting an electrode via the ridge, wherein the side of the ridge is made up of at least two portions having different gradients.
Claims21
A semiconductor laser diode comprising:
- an active layer in which stimulated emission occurs;
- a first and a second material layers located on either side of said active layer and having lower refractive indices than said active layer;
- a ridge protruding perpendicularly away from said active layer and located on one of said first and second material layers;
- an electrode located on said ridge, wherein said ridge has two opposing sides, each side including at least two portions having different gradients.
A method of manufacturing a semiconductor laser diode, comprising the steps of:
- forming an active layer in which stimulated emission occurs;
- forming a first and a second material layers located on either side of said active layer and having lower refractive indices than said active layer;
- forming a ridge protruding perpendicularly away from said active layer and located on one of said first and second material layers;
- forming an electrode located on said ridge;
- wherein said ridge has two opposing sides, each side including at least two portions having different gradients.
Dependencies are inferred from the claim text.