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AssigneeSony Corporation
InventorMasaki Saito
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A semiconductor device fabrication apparatus includes a thermal treatment device for thermally processing a semiconductor substrate, a first oxygen monitor for monitoring the density of oxygen in said thermal treatment device, a load-lock chamber separably coupled to said thermal treatment device for housing the semiconductor substrate before thermal treatment thereof by said thermal treatment device, and a second oxygen monitor for monitoring the density of oxygen in said load-lock chamber. First, the semiconductor substrate is introduced into the load-lock chamber, and then the load-lock chamber is evacuated. Thereafter, the density of oxygen in the load-lock chamber is measured by the second oxygen monitor, and the thermal treatment device is evacuated, after which the density of oxygen in the thermal treatment device is measured by the first oxygen monitor. The semiconductor substrate is introduced from the load-lock chamber into the thermal treatment device after the densities of oxygen in the load-lock chamber and the thermal treatment device as measured by the first and second oxygen monitors, respectively, have dropped below a predetermined level. A thin film is deposited on the semiconductor substrate in the thermal treatment device.
A method of depositing a thin film on a semiconductor substrate comprising the following sequential steps:
Dependencies are inferred from the claim text.