Dielectric films and methods of forming same
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Dan Gealy
Life of this patent
Estimating the term…
Abstract
The present invention provides a method for forming a dielectric film, e.g., a barium-strontium-titanate film, preferably having a thickness of less than about 600 Å. According to the present invention, the dielectric film is preferably formed using a chemical vapor deposition process in which an interfacial layer and a bulk layer are formed. The interfacial layer has an atomic percent of titanium less than or equal to the atomic percent of titanium in the bulk layer. Such films are particularly vantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
Claims35
A method for use in fabrication of integrated circuits, the method comprising:
- providing a substrate assembly having a surface;
- and
- forming a barium-strontium-titanate film on at least a portion of the surface, wherein the barium-strontium-titanate film comprises an interfacial layer having an atomic percent of titanium less than the atomic percent of titanium in a bulk layer of the film and further wherein the bulk layer has a thickness greater than the interfacial layer.
A method for use in formation of a capacitor, the method comprising:
- providing a first electrode having a surface;
- forming a barium-strontium-titanate dielectric film on at least a portion of the surface of the first electrode, wherein the barium-strontium-titanate film comprises:
- an interfacial barium-strontium-titanate layer on the at least a portion of the surface of the first electrode, and
- a bulk barium-strontium-titanate layer comprising from about 50 atomic percent to about 53.5 atomic percent titanium, wherein the interfacial layer comprises from about 1 atomic percent to about 3 atomic percent less titanium than the bulk dielectric film;
- and
- forming a second electrode on at least a portion of the barium-strontium-titanate dielectric film and further wherein the bulk barium-strontium-titanate layer has a thickness greater than the interfacial barium-strontium-titanate layer.
A method of forming a titanium-containing dielectric film comprising:
- forming a titanium-containing interfacial dielectric layer on a substrate assembly surface;
- and
- forming a titanium-containing bulk dielectric layer, wherein the atomic percent titanium in the interfacial layer is less than the atomic percent of titanium in the bulk layer, wherein forming the titanium-containing interfacial layer comprises providing a first organometallic precursor and a titanium-containing organometallic precursor to a chemical vapor deposition chamber containing the substrate assembly, wherein a concentration of the first organometallic precursor and the titanium-containing organometallic precursor in the chemical vapor deposition chamber is such that a substantially equal to or higher dielectric constant is attained for the interfacial layer relative to the bulk layer and further wherein the bulk dielectric layer has a thickness greater than the interfacial dielectric layer.
A method of providing a dielectric film, the method comprising forming a dielectric film using one or more organometallic precursors, wherein forming the dielectric film includes:
- forming an interfacial dielectric layer on a substrate assembly surface using the one or more organometallic precursors;
- and
- forming a bulk dielectric layer on the interfacial dielectric layer, wherein the atomic percent of at least one metal component present in the interfacial layer is controlled such that a higher dielectric constant is attained for the interfacial dielectric layer relative to the bulk dielectric layer and further wherein the bulk dielectric layer has a thickness greater than the interfacial dielectric layer.
A method for use in fabrication of integrated circuits, the method comprising:
- providing a substrate assembly having a surface;
- and
- forming a barium-strontium-titanate film on at least a portion of the surface, wherein the barium-strontium-titanate film comprises an interfacial layer having an atomic percent of titanium less than or equal to the atomic percent of titanium in a bulk layer of the film, and further wherein the interfacial layer comprises a greater atomic percent of barium relative to the atomic percent of strontium.
Dependencies are inferred from the claim text.