High silicon content monomers and polymers suitable for 193 nm bilayer resists
AssigneeInternational Business Machines Corporation
InventorsPhillip Joe Brock, Richard Anthony DiPietro, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
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Abstract
Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
Claims26
A process for generating a bilayer resist image on a substrate comprising:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising:
- (i) a radiation sensitive acid generator and
- (ii) a polymer polymerized from a silicon-containing monomer that is acid-labile and a silicon-containing monomer that is acid-stable, and the acid-stable the silicon monomers containing an ethylenically unsaturated group, monomer has a silicon atom separated from an ester oxygen by one methylene carbon atom, or is void of any ester oxygen linking the silicon atom;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate comprising:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic;
- underlayer with a top layer comprising:
- (i) a radiation sensitive acid generator and
- (ii) a polymer polymerized from a silicon-containing monomer that is acid-labile and a silicon-containing monomer that is acid-stable, wherein the polymer is polymerized from more than one silicon-containing monomer that is acid-labile;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate comprising:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising:
- (i) a radiation sensitive acid generator and
- (ii) a polymer polymerized from a silicon-containing monomer that is acid-labile and a silicon-containing monomer that is acid-stable, wherein the polymer is polymerized from more than one acid-stable silicon monomer and more than one acid-labile silicon monomer;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate comprising:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising:
- (i) a radiation sensitive acid generator and
- (ii) a polymer polymerized from a silicon-containing monomer that is acid-labile and a silicon-containing monomer that is acid-stable, wherein the silicon monomers contain a norbornene group;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate comprising:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising:
- (i) a radiation sensitive acid generator and
- (ii) a polymer polymerized from a silicon-containing monomer that is acid-labile and a silicon-containing monomer that is acid-stable, wherein the silicon-containing monomer that is acid-labile contains more than one silicon group that is acid-labile;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate comprising:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising:
- (i) a radiation sensitive acid generator and
- (ii) a polymer polymerized from a silicon-containing monomer that is acid-labile and a silicon-containing monomer that is acid-stable, wherein the silicon-containing monomer that is acid-stable contains more than one silicon group that is acid-stable;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
Dependencies are inferred from the claim text.