Pattern formation material and method

A pattern formation material comprising:

• a base polymer including a group for producing an active methylene group through decomposition in the presence of an acid;
• and
• an acid generator for generating an acid through irradiation with light;
• wherein said group for producing an active methylene group is represented by a general formula, —C(OR1)═C═C(OR2)(OR3), wherein R1, R2, and R3, are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.

A pattern formation material comprising:

• a base polymer having alkali-solubility;
• a dissolution inhibiting agent for inhibiting the alkali-solubility of said base polymer and producing an active methylene group through decomposition in the presence of an acid;
• and
• an acid generator for generating an acid through irradiation with light;
• wherein said group for producing an active methylene group is represented by a general formula, —CO—CH═C(OR1)(OR2), wherein R1 and R2 are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.

A pattern formation material comprising:

• a base polymer having alkali-solubility;
• a dissolution inhibiting agent for inhibiting the alkali-solubility of said base polymer and producing an active methylene group through decomposition in the presence of an acid;
• and
• an acid generator for generating an acid through irradiation with light;
• wherein said group for producing an active methylene group is represented by a general formula, —C(OR1)═C═C(OR2)(OR3), wherein R1, R2 and R3 are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a resist material including a base polymer having a group for producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light;
• and
• forming a resist pattern by irradiating said resist film with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure and developing said resist film with an alkaline developer after the pattern exposure;
• wherein said group for producing an active methylene group is represented by a general formula, —CO—CH═C(OR1)(OR2), wherein R1 and R2 are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a resist material including a base polymer having a group for producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light;
• and
• forming a resist pattern by irradiating said resist film with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure and developing said resist film with an alkaline developer after the pattern exposure;
• wherein said group for producing an active methylene group is represented by a general formula, —C(OR1)═C═C(OR2)(OR3), wherein R1, R2 and R3 are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a resist material including a base polymer having alkali-solubility, a dissolution inhibiting agent for inhibiting the alkali-solubility of said base polymer and producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light;
• and
• forming a resist pattern by irradiating said resist film with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure and developing said resist film with an alkaline developer after the pattern exposure;
• wherein said group for producing an active methylene group is represented by a general formula, —CO—CH═C(OR1)(OR2), wherein R1 and R2 are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.

A pattern formation method comprising the steps of:

• forming a resist film by applying, on a substrate, a resist material including a base polymer having alkali-solubility, a dissolution inhibiting agent for inhibiting the alkali-solubility of said base polymer and producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light;
• and
• forming a resist pattern by irradiating said resist film with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure and developing said resist film with an alkaline developer after the pattern exposure;
• wherein said group for producing an active methylene group is represented by a general formula, —C(OR,)═C═C(OR2)(OR3), wherein R1, R2 and R3 are the same or different substituent or non-substituted groups selected from the group consisting of a saturated alkyl group, an unsaturated alkyl group, a cyclic saturated alkyl group, a cyclic unsaturated alkyl group, a silyl group and a carbonyl group.