Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate,
• forming an insulating film having an opening on said semiconductor film,
• forming a thin film comprising an element selected from the group 14 to cover said insulating film and said opening,
• crystallizing a part of said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said second heat treatment being conducted within a temperature range of 800 to 1050° C., which is higher than said first heat treatment.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate,
• forming an insulating film having an opening on said semiconductor film,
• adding an element selected from the group 14 to an exposed part of said semiconductor film through said opening,
• crystallizing a part of said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said second heat treatment being conducted within a temperature range of 800 to 1050° C., which is higher than said first heat treatment.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate,
• coating a solution containing an element selected from the group 14, followed by spin drying, to form a layer containing said element selected from the group 14 on said semiconductor film,
• crystallizing said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said second heat treatment being conducted within a temperature range of 800 to 1050° C., which is higher than said first heat treatment.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate,
• forming an insulating film having an opening on said semiconductor film,
• coating a solution containing an element selected from the group 14, followed by spin drying, to form a layer containing said element selected from the group 14 on an exposed part of said semiconductor film through said opening,
• crystallizing a part of said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said second heat treatment being conducted within a temperature range of 800 to 1050° C., which is higher than said first heat treatment.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate, forming a thin film comprising an element selected from the group 14 on said semiconductor film,
• crystallizing said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said first heat treatment being conducted at a temperature of from 450 to 600° C., and said second heat treatment being conducted at a temperature of from 800 to 1,050° C.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate,
• forming an insulating film having an opening on said semiconductor film,
• forming a thin film comprising an element selected from the group 14 to cover said insulating film and said opening,
• crystallizing a part of said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said first heat treatment being conducted at a temperature of from 450 to 600° C., and said second heat treatment being conducted at a temperature of from 800 to 1,050° C.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate;
• coating a solution containing an element selected from the group 14, followed by spin drying, to form a layer containing said element selected from the group 14 on said semiconductor film,
• crystallizing a part of said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said first heat treatment being conducted at a temperature of from 450 to 600° C., and said second heat treatment being conducted at a temperature of from 800 to 1,050° C.

A process for producing a semiconductor device comprising:

• forming a semiconductor film comprising silicon over a substrate,
• forming an insulating film having an opening on said semiconductor film,
• coating a solution containing an element selected from the group 14, followed by spin drying, to form a layer containing said element selected from the group 14 on an exposed part of said semiconductor film through said opening,
• crystallizing a part of said semiconductor film by a first heat treatment, to convert into a crystalline semiconductor film, and
• conducting a second heat treatment to said crystalline semiconductor film in an oxidizing atmosphere,
• said first heat treatment being conducted at a temperature of from 450 to 600° C., said second heat treatment being conducted at a temperature of from 800 to 1,050° C.