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AssigneeThe Regents of the University of California
InventorsQuanxi Jia, Brady J. Gibbons, Alp T. Findikoglu, Bae Ho Park
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A dielectric composite material comprising at least two crystal phases of different components with TiO2 as a first component and a material selected from the group consisting of Ba1−xSrxTiO3 where x is from 0.3 to 0.7, Pb1−xCaxTiO3 where x is from 0.4 to 0.7, Sr1−xPbxTiO3 where x is from 0.2 to 0.4, Ba1−xCdxTiO3 where x is from 0.02 to 0.1, BaTi1−xZrxO3 where x is from 0.2 to 0.3, BaTi1−xSnxO3 where x is from 0.15 to 0.3, BaTi1−xHfxO3 where x is from 0.24 to 0.3, Pb1−1.3xLaxTiO3+0.2x where x is from 0.23 to 0.3, (BaTiO3)x(PbFeo0.5Nb0.5O3)1−x where x is from 0.75 to 0.9, (PbTiO3)−(PbCo0.5W0.5O3)1−x where x is from 0.1 to 0.45, (PbTiO3)x(PbMg0.5W0.5O3)1−x where x is from 0.2 to 0.4, and (PbTiO3)x(PbFe0.5Ta0.5O3)1−x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.
A dielectric composite material comprising at least two crystal phases of different components with TiO2 as a first component and a material selected from the group consisting of Ba1−xSrxTiO3 where x is from 0.3 to 0.7, Pb1−xCaxTiO3 where x is from 0.4 to 0.7, Sr1−xPbxTiO3 where x is from 0.2 to 0.4, Ba1−xCdxTiO3 where x is from 0.02 to 0.1, BaTi1−xZrxO3 where x is from 0.2 to 0.3, BaTi1−xSnxO3 where x is from 0.15 to 0.3, BaTi1−xHfxO3 where x is from 0.24 to 0.3, Pb1−1.3LaxTiO3+0.2x where x is from 0.23 to 0.3, (BaTiO3)x(PbFe0.5Nb0.5O3)1−x where x is from 0.75 to 0.9, (PbTiO3)x(PbCo0.5W0.5O3)1−x where x is from 0.1 to 0.45, (PbTiO3)x(PbMg0.5W0.5O3)1−xwhere x is from 0.2 to 0.4, and (PbTiO3)x(PbFe0.5Ta0.5O3)1−xwhere x is from 0 to 0.2, as the second component.
A dielectric composite material comprising at least two crystal phases of different components, formed at high temperatures from TiO2 and a material selected from the group consisting of Ba1−xSrxTiO3 where x is from 0.3 to 0.7, Pb1−xCaxTiO3 where x is from 0.4 to 0.7, Sr1−xPbxTiO3 where x is from 0.2 to 0.4, Ba1−xCdxTiO3 where x is from 0.02 to 0.1, BaTi1−xZrxO3 where x is from 0.2 to 0.3, BaTi1−xSnxO3 where x is from 0.15 to 0.3, BaTi1−xHfxO3 where x is from 0.24 to 0.3, Pb1−1.3xLaxTiO3+0.2x wherei x is from 0.23 to 0.3, (BaTiO3)x(PbFe0.5Nb0.5O3)1−x where x is from 0.75 to 0.9, (PbTiO3)x(PbCo0.5W0.5O3)1−x where x is from 0.1 to 0.45, (PbTiO3)x(PbMg0.5W0.5O3)1−x where x is from 0.2 to 0.4, and (PbTiO3)x(PbFe0.5Ta0.5O3)1−x where x is from 0 to 0.2.
A process of forming a thin film dielectric composite material including at least two crystal phases of different components with TiO2 as a first component and a material selected from the group consisting of Ba1−xSrxTiO3 where x is from 0.3 to 0.7, Pb1−xCaxTiO3 where x is from 0.4 to 0.7, Sr1−xPbxTiO3 where x is from 0.2 to 0.4, Ba1−xCdxTiO3 where x is from 0.02 to 0.1, BaTi1−xZrxO3 where x is from 0.2 to 0.3, BaTi1−xSnxO3 where x is from 0.15 to 0.3, BaTi1−xHfxO3 where x is from 0.24 to 0.3, Pb1−1.3xLaxTiO3+0.2x where x is from 0.23 to 0.3, (BaTiO3)x(PbFe0.5Nb0.5O3)1−x where x is from 0.75 to 0.9, (PbTiO3)x(PbCo0.5W0.5O3)1−x where x is from 0.1 to 0.45, (PbTiO3)x(PbMg0.5W0.5O3)1−x where x is from 0.2 to 0.4, and (PbTiO3)x(PbFe0.5Ta0.5O3)1−x where x is from 0 to 0.2, as the second component comprising:
Dependencies are inferred from the claim text.