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US 6,444,297 B1Granted
Method of producing a thick film metallization on an aluminum nitride substrate
AssigneeElectro Technik Industries, Inc.
InventorRichard Bischel
Life of this patent
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Abstract
A metallization layer structure is applied to an aluminum nitride substrate by the application of an intermediate buffer layer of either silicon monoxide or silicon dioxide. Conventional oxide bonding conductor and resistor formulations can then be applied and readily bonded to the intermediate buffer layer resulting in thermally and mechanically stable structure on the surface of the aluminum nitride substrate.
Claims5
A ceramic chip having an adhesively strong thick film metallization adhered thereto, the ceramic chip comprising:
- an aluminum nitride ceramic substrate,
- a layer of 900 angstroms to 3000 angstroms thick of a buffer selected from the group consisting of silicon monoxide and silicon dioxide and a precious metal metallization layer adhered to the buffer layer.
Dependencies are inferred from the claim text.