Thermal processing unit and thermal processing method
AssigneeTokyo Electron Limited
InventorsMasayuki Kitamura, Tomohiro Shiotani, Isao Tafusa
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AssigneeTokyo Electron Limited
InventorsMasayuki Kitamura, Tomohiro Shiotani, Isao Tafusa
Estimating the term…
A thermal processing unit of the invention includes a substrate-holder which can support a plurality of substrates in such a manner that the plurality of substrates are arranged at a predetermined pitch, and a chamber vessel for housing the substrate-holder. The inside of the chamber vessel may be made a vacuum. A gas-introducing slit having a small conductance is provided in one part of a peripheral area of the plurality of substrates held by the substrate-holder. The gas-introducing slit extends in a direction in which the plurality of substrates are arranged and supplies a processing gas for a thermal process into the chamber vessel. A gas-absorbing opening having a large conductance is provided in another part of the peripheral area of the plurality of substrates held by the substrate-holder. The gas-absorbing opening extends in the direction in which the plurality of substrates are arranged. The substrate-holder may be loaded into and unloaded out of the chamber vessel by a loading mechanism.
A thermal processing unit comprising:
A thermal processing method comprising:
A film-forming processing method comprising:
Dependencies are inferred from the claim text.