Slurry for CMP and CMP method
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Hiroyuki Yano
Life of this patent
Estimating the term…
Abstract
A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing abrasives, a down force-dependency of a polishing rate is high and an increase in dishing can be effectively suppressed.
Claims9
A CMP method for polishing a conductive film, by using a CMP slurry comprising polishing abrasives containing mixed-crystal abrasives of silica and alumina.
A CMP method in which a conductive film, which is provided on an insulating film with a trench, is polished by using a CMP slurry comprising polishing abrasives containing mixed-crystal abrasives of silica and alumina until a surface of said insulating film is exposed, whereby said conductive film is selectively left in said trench.
A method of forming a semiconductor device, wherein conductive films are formed within trenches, comprising:
- forming an insulating film above a substrate;
- forming trenches in the insulating film;
- depositing a conductive layer on the insulating film;
- and
- polishing the conductive layer using a slurry to selectively leave at least one conductive film in the trenches, the slurry comprising mixed-crystal abrasives of silica and another oxide.
Dependencies are inferred from the claim text.