Method of fabricating microelectromechanical and microfluidic devices

A method for fabricating a microelectromechanical device, comprising the steps of:

• a) providing a silicon substrate having first and second opposing surfaces;
• b) forming first and second silicon oxide layers on said first and second surfaces of said substrate, respectively;
• c) coating a first photoresist layer on said first silicon oxide layer;
• d) defining simultaneously a first pattern and a second pattern on said first photoresist layer;
• e) transferring said first pattern and said second pattern onto said first silicon oxide layer;
• f) removing said first photoresist layer;
• g) coating a second photoresist layer on said first silicon oxide layer;
• h) defining simultaneously a third pattern and said first pattern on said second photoresist layer such that said second pattern remains occluded by said second photoresist layer;
• i) etching, after the step of defining said third pattern and said first pattern, said first pattern into said silicon substrate for a first period of time;
• j) transferring said third pattern onto said first silicon oxide layer;
• k) etching simultaneously, after the step of transferring said third pattern, said first and third patterns for a second period of time;
• l) removing said second photoresist layer;
• and
• m) etching simultaneously said first, second and third patterns for a third period of time.

A method for fabricating a microelectromechanical device, comprising the steps of:

• a) providing a silicon substrate having first and second opposing surfaces;
• b) doping said first surface with a dopant of a same conductivity type as a conductivity type of said substrate;
• c) forming a pad oxide on said first surface;
• d) forming a silicon nitride film on said pad oxide;
• e) patterning and etching said silicon nitride film to form at least one silicon nitride contact area on said pad oxide;
• f) forming first and second silicon oxide layers on said first and second surfaces of said substrate, respectively;
• g) coating a first photoresist layer on one of said first and said second silicon oxide layers;
• h) defining a first pattern on said first photoresist layer;
• i) transferring said first pattern onto said one of said first and said second silicon oxide layers;
• j) removing said first photoresist layer;
• k) coating a second photoresist layer on said one of said first and said second silicon oxide layers;
• l) defining a second pattern on said second photoresist layer, wherein said second pattern includes as a subset said first pattern, whereby said first pattern is not occluded by said second photoresist layer;
• m) etching, after the step of defining said second pattern, said first pattern into said silicon substrate for a first period of time;
• n) transferring said second pattern onto said one of said first and said second silicon oxide layers;
• o) etching simultaneously, after the step of transferring said second pattern, said first and second patterns for a second period of time;
• p) removing, after step (o), said at least one silicon nitride contact area and any of said pad oxide beneath said at least one silicon nitride contact area, thereby forming at least one contact area on said first surface;
• and
• q) depositing a metal on said at least one contact area.

A method for fabricating a microelectromechanical device, comprising the steps of:

• a) providing a silicon substrate having first and second opposing surfaces;
• b) forming first and second silicon oxide layers on said first and second surfaces of said substrate, respectively;
• c) coating a first photoresist layer on said first silicon oxide layer;
• d) defining a first pattern on said first photoresist layer;
• e) transferring said first pattern onto said first silicon oxide layer;
• f) coating, defining, and transferring a second pattern onto one of said first and second silicon oxide layers;
• g) removing all photoresist provided in coating, defining, and transferring said second pattern;
• h) coating and defining a third pattern onto said one of said first and second silicon oxide layers, wherein said third pattern includes as a subset said second pattern, whereby said second pattern is not occluded;
• i) etching, after the step of defining said third pattern, said second pattern into said silicon substrate for a first period of time;
• j) transferring said third pattern onto said one of said first and second silicon oxide layers;
• k) etching simultaneously, after the step of transferring said second pattern, said second and third patterns for a second period of time;
• l) removing at least all photoresist layers which occlude said first pattern;
• and
• m) etching said first pattern into said silicon substrate.