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US 6,444,110 B1Granted
Electrolytic copper plating method
AssigneeShipley Company, L.L.C.
InventorsLeon R. Barstad, James E. Rychwalski, Mark Lefebvre, Stephane Menard, James L. Martin, Robert A. Schetty, III, Michael Toben
Life of this patent
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Abstract
The present invention provides methods for the use of copper electroplating compositions. Electroplating compositions of the invention contain an increased brightener concentration that can provide effective copper plate on difficult-to-plate aperture walls, including high aspect ratio, small diameter microvias.
Claims46
A method for plating a semiconductor microchip wafer substrate, comprising:
- electrolytically depositing copper onto said semiconductor microchip wafer substrate from an electroplating composition that comprises at least one soluble copper salt, an electrolyte, and one or more brightener compounds having a molecular weight of about 1000 or less and that are present in a concentration of at least about 1.5 mg per liter of the electroplating solution, the microchip wafer substrate comprising one or more microvias having an aspect ratio of at least 4:1 and a diameter of about 200 nm or less.
A method for plating on a semiconductor substrate comprising one or more microvias, comprising:
- electrolytically depositing copper onto said semiconductor substrate from an acidic electroplating composition that comprises at least one soluble copper salt, an electrolyte, one or more brightener compounds having a molecular weight of about 1000 or less and that are present in a concentration of at least 2 mg per liter of the electroplating composition, a suppressor agent, and a halide ion source, semiconductor substrate comprising one or more microvias having an aspect ratio of at least 4:1 and a diameter of about 200 nm or less.
Dependencies are inferred from the claim text.