Ionizing sputtering method

Abstract

To form a film by ionized sputtering with good bottom coverage for holes with a high aspect ratio, and to simplify the structure inside and out of the sputter chamber, a target 2 is provided inside a sputter chamber 1 equipped with an exhaust system 11 and is sputtered by a sputtering power source 3. The released sputter particles are made to arrive at a substrate 50 to form a film. The sputtering power source 3 sends electric power of at least 5 W/cm2 to a target 2, and the sputter particles are ionized in a plasma formed by this electric power alone. A cylindrical shield 6 may be provided between the target 2 and the substrate holder 5 to restrict the plasma formation space, and an electric field establishment means 8 may set up an electric field for extracting the ionized sputter particles from the plasma P and directing them at the substrate 50.

Dependencies are inferred from the claim text.