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AssigneeNGK Insulators, Ltd.
InventorsShigeru Hanzawa, Masatoshi Futakawa, Saburo Shimizu, Kaoru Onuki, Ikuo Ioka, Ynte Johan Stockmann
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A Si—SiC material of Si concentration-gradient type is obtained by melt-infiltrating Si into a molded material comprising SiC particles. The Si—SiC material has a porosity of 1.0% or less and in the Si—SiC material the Si concentration decreases gradually from the surface layer towards the innermost layer. A SiC fiber-reinforced Si—SiC composite material of Si concentration-gradient type is obtained by melt-infiltrating Si into a molded material comprising a SiC fiber and SiC particles. The composite material has a porosity of 1.0% or less and in the composite material the Si concentration decreases gradually from the surface layer towards the innermost layer. These materials are significantly improved in corrosion resistance in highly oxidative and corrosive environment, strength, and healability of defects of surface layer and innermost layer.
A process for producing a Si—SiC material of Si concentration-gradient type by melt-infiltrating Si into a molded material comprising SiC particles, which process comprises preparing at least two kinds of mixtures each comprising SiC particles having a different tap density, laminating the mixtures to form a molded material, keeping the molded material and Si at a temperature of 1,100 to 1,400° C. in an inert gas atmosphere, and then increasing the temperature to 1,500 to 2,500° C. to melt-infiltrate Si into the molded material.
A process for producing a SiC fiber-reinforced Si—SiC composite material of Si concentration-gradient type obtained by melt-infiltrating Si into a molded material comprising a SiC fiber and SiC particles, which process comprises preparing at least two kinds of mixtures each comprising SiC particles having a different tap density, mixing a SiC fiber into each mixture, laminating the resulting mixtures to form a molded material, keeping the molded material and Si at a temperature of 1,100 to 1,400° C. in an inert gas atmosphere, and then increasing the temperature to 1,500 to 2,500° C. to melt-infiltrate Si into the molded material.
Dependencies are inferred from the claim text.