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US 6,441,716 B1Granted
Semiconductor piezoresistor
AssigneeBoston MicroSystems, Inc.
InventorsDharanipal Doppalapudi, Theodore D. Moustakas, Richard Mlcak, Harry L. Tuller
Life of this patent
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Abstract
A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.
Claims24
A piezoresistor comprising:
- a base substrate;
- and
- a quantum well structure formed in combination with the base substrate, the quantum well structure comprising at least one smaller bandgap layer bounded by larger bandgap layers, the at least one smaller bandgap layer having a thickness of 30 Å or less.
A piezoresistor comprising:
- a single crystal base substrate;
- and
- a quantum well structure formed in combination with the base substrate, the quantum well structure having alternating larger and smaller bandgap semiconductor layers, wherein quantum confinement of carriers is achieved in the smaller bangap layers, the smaller bandgap layers having a thickness of 30 Å or less.
A method of forming a piezoresistor comprising:
- providing a base substrate;
- and
- forming a quantum well structure in combination with the base substrate, the quantum well structure comprising at least one smaller bandgap layer bounded by larger bandgap layers, the at least one smaller bandgap layer having a thickness of 30 Å or less.
A method of forming a piezoresistor comprising:
- providing a single crystal base substrate;
- and
- forming a quantum well structure in combination with the base substrate, the quantum well structure having alternating larger and smaller bandgap semiconductor layers, wherein quantum confinement of carriers is achieved in the smaller band gap layers, the smaller bandgap layers having a thickness of 30 Å or less.
Dependencies are inferred from the claim text.