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US 6,441,611 B2Granted
Magnetic sensor having a GMR layer
AssigneeFujitsu Limited
InventorYoshihiko Seyama
Life of this patent
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Abstract
A magnetic sensor utilizing a giant magnetoresistance (GMR) effect, wherein an insulation layer with a contact hole is formed on a lower terminal layer, a GMR layer is formed thereover on the region including the entire contact hole and at least the surrounding insulation layer, and an upper terminal layer is formed thereover. The sensor offers several advantages in that it is easy to manufacture and is compact, and has a high degree of resistance change.
Claims5
A magnetic sensor utilizing a giant magnetoresistance (GMR) effect, comprising:
- an electrically conductive lower terminal layer;
- an insulation layer with a contact hole formed on the lower terminal layer;
- a GMR layer formed on the insulation layer in a region surrounding at least the contact hole and in contact with the lower terminal layer;
- and
- an electrically conductive upper terminal layer formed on the GMR layer.
2 more elements
Dependencies are inferred from the claim text.