Cathode emitter devices, field emission display devices, and methods of detecting infrared light

A cathode emitter device, comprising:

• a substrate comprising an n-type doped region overlying a p-type doped region;
• the n-type and p-type doped regions of the substrate physically contacting one another at an interface;
• the interface being a junction diode;
• an array of cathode emitter tips in electrical connection with the junction diode;
• and
• a receptor assembly beside the junction diode, the receptor assembly comprising a material different from that of the substrate, and comprising a p-type doped region and n-type doped region of said material different than the substrate;
• the p-type doped region of the receptor assembly electrically contacting the p-type doped region of the substrate, and the n-type doped region of the receptor assembly electrically contacting the n-type doped region of the substrate.

A cathode emitter device, comprising:

• a substrate comprising an n-type doped region overlying a p-type doped region;
• the n-type and p-type doped regions of the substrate joining at an interface;
• the interface being a junction diode;
• an array of cathode emitter tips formed in electrical connection with the junction diode;
• and
• a receptor assembly in electrical connection with the at least one of the n-type doped region or p-type doped region of the substrate;
• the receptor assembly and p-type doped region having electrical characteristics, the electrical characteristics of the receptor assembly being more readily altered by light having a wavelength of about 2500 nanometers or greater than are the electrical characteristics of one or both of the n-type doped region and the p-type doped region of the substrate.

A cathode emitter device, comprising:

• a substrate comprising a semiconductive material;
• the semiconductive material comprising an n-type doped region overlying a p-type doped region;
• the n-type and p-type doped regions of the semiconductive material physically contacting one another at an interface;
• an array of cathode emitter tips formed in electrical connection with the n-type doped region of the semiconductive material;
• and
• a second material in electrical contact with the semiconductive material p-type doped region;
• the second material and doped semiconductive material having electrical characteristics, the electrical characteristics of the second material being more readily altered by light having a wavelength of at least about 2500 nanometers or greater than are the electrical characteristics of the doped semiconductive material.

A field emission display device, comprising:

• a substrate comprising an n-type doped region overlying a p-type doped region;
• the n-type and p-type doped regions of the substrate joining at an interface;
• the interface being a junction diode;
• an array of cathode emitter tips formed in electrical connection with the junction diode;
• and
• a receptor assembly beside the junction diode, the receptor assembly comprising a material different from that of the substrate, and comprising a p-type doped region and n-type doped region of said material different than the substrate;
• the p-type doped region of the receptor assembly contacting the p-type doped region of the substrate, and the n-type doped region of the receptor assembly contacting the n-type doped region of the substrate;
• and
• a phosphor-coated plate spaced from the cathode emitter tips.

A field emission display device, comprising:

• a first material comprising an n-type doped region overlying a p-type doped region;
• the n-type and p-type doped regions joining at an interface;
• an array of cathode emitter tips formed in electrical connection with the n-type doped region;
• wherein the p-type doped region has electrical characteristics which are more readily altered by light having a wavelength of about 2500 nanometers or greater than are the electrical characteristics of p-type doped silicon;
• a phosphor-coated plate spaced from the cathode emitter tips;
• and
• a second material electrically between the first material and the emitter tips;
• the second material comprising an n-type doped region and a p-type doped region;
• the n-type doped region of the second material physically contacting the n-type doped region of the first material and the f-type doped region of the second material physically contacting the p-type doped region of the first material;
• the second material comprising silicon.

A method of detecting light, comprising:

• forming an emitter assembly in electrical connection with a p-n diode;
• the p-n diode being within a first material, the first material not being monocrystalline silicon or polycrystalline silicon;
• the first material having electrical characteristics which are more readily altered by the light than are the electrical characteristics of a p-n diode within monocrystalline silicon or polycrystalline silicon;
• providing a phosphor spaced from the emitter assembly;
• stimulating the An diode with light and thereby causing at least one electron to be emitted from the emitter assembly and toward the phosphor, the emitted electron striking the phosphor to cause an Image indicating the presence of the light;
• and
• providing a second material electrically between the first material and the emitter tips;
• the second material comprising an n-type doped region and a p-type doped region;
• the n-type doped region of the second material physically contacting the n-type doped region of the first material and the p-type doped region of the second material physically contacting the p-type doped region of the first material;
• the second material comprising silicon.

A method of detecting light having a wavelength of at least about 2500 nanometers, comprising:

• forming an emitter assembly in electrical connection with a p-n diode;
• the p-n diode being within a silicon substrate;
• the p-n diode having electrical characteristics;
• forming a receptor in electrical connection with the An diode;
• the receptor having electrical characteristics that are more sensitive to light having a wavelength greater than about 2500 nanometers than are the electrical characteristics of the p-n diode;
• providing a phosphor spaced from the emitter assembly;
• stimulating the receptor with light having a wavelength of at least about 2500 nanometers, the stimulating altering electrical characteristics of the receptor;
• changing the electrical characteristics of the p-n diode through the alteration in the electrical characteristics of the receptor and causing at least one electron to be emitted from the emitter assembly and toward the phosphor, the emitted electron striking the phosphor to cause an image indicating the presence of the light having a wavelength greater than about 2500 nanometers.