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US 6,441,497 B1Granted
Semiconductor device fabricated on multiple substrates and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorIl-Seok Han
Life of this patent
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Abstract
A semiconductor device fabricated on a multiple substrate with a first structure including a first semiconductor substrate with at least one first bonding pad and at least one alignment key formed thereon, and a second structure including a second semiconductor substrate with at least one second bonding pad and at least one alignment aperture passing through the second semiconductor substrate. By irradiating a UV beam through the alignment aperture and detecting reflection off the alignment key, the first and second semiconductor substrates are aligned.
Claims7
A semiconductor device, comprising:
- a first structure, including a first semiconductor substrate, at least one first bonding pad, and at least one alignment key formed on the first semiconductor substrate;
- and
- a second structure, including a second semiconductor substrate, at least one second bonding pad, and at least one alignment aperture passing through the second semiconductor substrate.
A semiconductor device, comprising:
- a first structure, including a first semiconductor substrate having a first circuit device, a first interlayer insulating layer formed on the first semiconductor substrate, at least one first bonding pad formed on the first interlayer insulating layer, and at least one alignment key formed on the first interlayer insulating layer;
- and
- a second structure, including a second semiconductor substrate having a second circuit device, a second interlayer insulating layer formed on the second semiconductor substrate, at least one second bonding pad formed on the second interlayer insulating layer, and at least one beam guiding aperture passing through the second structure and providing a beam path to the alignment key on the first interlayer insulating layer.
Dependencies are inferred from the claim text.