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AssigneeInternational Business Machines Corporation
InventorsAlfred Grill, David R. Medeiros, Vishnubhai V. Patel
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A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcyclotetrasiloxane and cyclopentene oxide.
An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising:
The electronic structure according to cliam 1, further comprising a dielectric cap layer situated between said second layer of insulating material and said third layer of insulating material.
The electronic structure according to cliam 1, further comprising:
An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising:
The electronic structure according to cliam 13, further comprising:
The electronic structure according to cliam 17, wherein said first dielectric cap layer and said second dielectric cap layer are formed of a modified ultralow-k material.
An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising:
An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising:
An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising:
An electronic structure having layers of insulating material as intralevel or interlevel dielectrics in a wiring structure comprising:
An ultralow-k dielectric material for use in an electronic device, said ultralow-dielectric material comprising Si, C, O and H, and a multiplicity of nanometer-sized pores, said ultralow-k material having a dielectric constant of not more than about 2.8.
Dependencies are inferred from the claim text.