Semiconductor device with tantalum nitride barrier film
AssigneeNEC Corporation
InventorKouichi Motoyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a copper interconnect filled in the inter-layer insulating film 4 composed of at least SiOF, via a barrier film 7. In the semiconductor device, the barrier film is composed of tantalum nitride containing 30 to 60% of nitrogen, in order to suppress the film peeling which may occur in the CMP step after the annealing conducted for reducing the resistivity of copper film.
Claims8
A semiconductor device having a copper interconnect filled in a trench of an inter-layer insulating film composed of at least SiOF, via a barrier film, wherein the barrier film is composed of tantalum nitride containing 30 to 60% of nitrogen.
Dependencies are inferred from the claim text.