Semiconductor device and method of manufacturing the same
AssigneesMitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Engineering Company Limited
InventorsKazushi Hatauchi, Tadashi Mitarai
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Abstract
The front surface (where a bonding electrode is located) of a first semiconductor chip 1a is bonded to a die-pad portion of a lead frame by an adhesive 4. The rear surface of the second semiconductor chip 1b is bonded to the rear surface of the first semiconductor chip 1a. The surface electrode of the first semiconductor chip 1a is electrically connected to an inner lead portion 3 of the lead frame by a bonding wire. The surface electrode of the second semiconductor chip 1b is connected to the inner lead potion 3 of the lead frame by the bonding wire.
Claims4
A semiconductor device comprising:
- a first semiconductor chip with a front surface side (where a bonding electrode is located) bonded to a die-pad portion of a lead frame, and
- a second semiconductor chip with a rear surface bonded to the rear surface of said first semiconductor chip, wherein
- an electrode on the front surface of said first semiconductor chip and an inner lead portion of said lead frame are electrically connected to each other by a wire, and
- an electrode on the front surface of said second semiconductor chip and the inner lead portion are electrically connected to each other by said wire.
Dependencies are inferred from the claim text.