Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film

A semiconductor device, comprising:

• an active element provided on a semiconductor substrate;
• a lower interlayer insulating film formed so as to cover said active element;
• a metal wire provided on said lower interlayer insulating film;
• an upper interlayer insulating film formed so as to cover said metal wire;
• and
• a pad metal for an electrode pad, said pad metal being provided on said upper interlayer insulating film,
• wherein each of said lower and upper interlayer insulating films has a quintuple layer structure, each of first, third and fifth layers thereof being a silicon nitride film or a silicon oxide film, while each of second and fourth layers thereof being spin-on-glass.

A semiconductor device, comprising:

• an active element provided on a semiconductor substrate;
• a lower metal layer covering said active element;
• a lower interlayer insulating film formed so as to cover said active element and said lower metal layer;
• an upper metal layer provided on said lower interlayer insulating film;
• an upper interlayer insulating film formed so as to cover said upper metal layer;
• and
• a pad metal for an electrode pad, said pad metal being provided on said upper interlayer insulating film and overlapping the active element,
• wherein each of said lower and upper interlayer insulating films have a trilaminar film structure, each of first and third layers of the trilaminar film structure being a silicon nitride film or a silicon oxide film, while a second layer of the trilaminar film structure being spin-on-glass, and said second layer being formed to a minimum thickness necessary for compensating the level difference of the upper metal layer,
• wherein at least one of said lower and upper interlayer insulating films further includes a fourth spin-on-glass layer, and a fifth layer which is a silicon nitride film or a silicon oxide film, the fourth and fifth layers being laminated on the first through third layers, and wherein the lower metal layer and the pad metal sandwich the lower and upper interlayer insulating films.

A semiconductor device, comprising:

• an active element provided on a semiconductor substrate, said active element including diffusion regions in the substrate, a polysilicon conductive gate on the substrate between said diffusion regions, and a silicon oxide insulating film over the diffusion regions and gate;
• and
• an interlayer insulating film formed so as to cover said active element,
• wherein said interlayer insulating film has a quintuple layer structure, each of first, third and fifth layers thereof being a silicon nitride film or a silicon oxide film, while each of second and fourth layers being spin-on-glass, wherein the layers of spin-on-glass being formed to a minimum thickness necessary for compensating the level difference of a metal layer;
• said third layer of the quintuple layer structure is partially in direct contact with the first layer, and said fifth layer is partially in direct contact with the third layer;
• the metal layer is formed on the active element and in electrical contact with one of said diffusion layers through a contact hole in the silicon oxide insulating film;
• a pad metal for an electrode pad, said pad metal being provided on said interlayer insulating film, and in electrical contact with the metal layer through a contact hole in the interlayer insulating film.

A semiconductor device, comprising:

• an active element provided on a semiconductor substrate;
• a lower interlayer insulating film formed so as to cover said active element;
• a second metal layer provided on said lower interlayer insulating film;
• an upper interlayer insulating film formed so as to cover said second metal layer, and
• a pad metal for an electrode pad, said pad metal being provided on said upper interlayer insulating film,
• wherein each of said lower and upper interlayer insulating films has a trilaminar film structure, each of first and third layers of the trilaminar film structure being a silicon nitride film or a silicon oxide film, while a second layer of the trilaminar film being spin on-glass,
• the semiconductor device further comprising a first metal layer formed on the active element,
• the film formed of spin-on-glass in each of the upper and lower interlayer insulating films being formed to a minimum thickness necessary for compensating the level difference of the first and second metal layers,
• wherein at least one of said lower and upper interlayer insulating films further includes a fourth spin-on-glass layer, and a fifth layer which is a silicon nitride film or a silicon oxide film, the fourth and fifth layers being laminated on the first through third layers, and the first through fifth layers form a quintuple layer structure;
• said third layer of the quintuple layer structure is partially in direct contact with the first layer;
• and said fifth layer is partially in direct contact with the third layer.