Method and apparatus for reducing fixed charge in semiconductor device layers

A device formed in a semiconductor substrate having a borophosphosilicate glass thin film formed thereon using organometallic precursors, a portion of the film forming an interface with at least one active area formed in the substrate, wherein:

• carbon migrates to a portion of the film near the interface during reflow such that different portions of the film have different carbon concentrations;
• the portion of the film near the interface to which carbon migrates has a highest concentration of carbon atoms;
• and
• the highest concentration of carbon atoms in the film is fewer than 1018 carbon atoms per cubic centimeter.

A device having active areas formed in a substrate and a borophosphosilicate glass thin film formed thereon using organometallic precursors, a portion of the film forming an interface with at least one of the active areas, wherein:

• carbon migrates to a portion of the film near the interface during reflow such that different portions of the film have different carbon concentrations;
• the portion of the film near the interface to which carbon migrates has a highest concentration of carbon atoms;
• the highest concentration of carbon atoms in the film is fewer than 1018 carbon atoms per cubic centimeter;
• and
• the film has a fixed charge density less than 5×1010 per square centimeter and a depth in the approximate range of 2,000 to 30,000 Angstroms.

A semiconductor device, comprising:

• a substrate;
• a plurality of transistor active areas formed in the substrate;
• at least one field oxide region disposed between at least two of the active areas;
• and
• a borophosphosilicate glass thin film formed over the substrate using organometallic precursors, a portion of the film forming an interface with at least one of the plurality of transistor active areas, wherein:
• carbon migrates to a portion of the film near the interface during reflow such that different portions of the film have different carbon concentrations;
• the portion of the film near the interface to which carbon migrates has a highest concentration of carbon atoms;
• the highest concentration of carbon atoms in the film is fewer than 1018 carbon atoms per cubic centimeter;
• and
• the film has a fixed charge density less than 5×1010 per square centimeter.

A device in a deposition chamber, comprising:

• a semiconductor substrate;
• a plurality of transistor active areas formed in the substrate;
• at least one field oxide region disposed between at least two of the active areas;
• a growing film of borophosphosilicate glass having a low fixed charge and a temperature in the range of 500 C to 750 C and a depth greater than 2,000 Angstroms but less than 30,000 Angstroms;
• an atmosphere disposed adjacent the substrate, the atmosphere including O2, O3 and an organometallic compound, and having a pressure greater than 200 Torr, wherein the concentration of O3 in O2 is in the approximate range of 13% to 20%.

A device formed in a semiconductor substrate having a borophosphosilicate glass thin film thereon, wherein the film is formed by a process comprising:

• positioning a semiconductor device in a deposition chamber;
• providing O2 and O3 within the deposition chamber such that the concentration of O3 in O2 is between approximately 13 and 20% by weight;
• heating the deposition chamber to greater than 500 degrees C. but less than 750 degrees C.;
• and
• depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of the heated deposition chamber at a pressure greater than 200 Torr.

A device formed in a semiconductor substrate having a borophosphosilicate glass thin film thereon, wherein the film has a highest concentration of carbon atoms that is fewer than 1018 carbon atoms per cubic centimeter, and wherein the film is formed by a process comprising:

• positioning a semiconductor device in a deposition chamber;
• providing O2 and O3 within the deposition chamber such that the concentration of O3 in O2 is between approximately 13 and 20% by weight;
• heating the deposition chamber to greater than 500 degrees C. but less than 750 degrees C.;
• depositing silicon dioxide using an organometallic precursor onto the semiconductor device at the temperature of the heated deposition chamber at a pressure greater than 200 Torr;
• and
• reflowing the thin film at a temperature of approximately 907 degrees C. or greater.

A device formed in a semiconductor substrate having a borophosphosilicate glass thin film thereon, wherein the film is formed by a process comprising:

• positioning a semiconductor device in a deposition chamber;
• providing O2 and O3 within the deposition chamber such that the concentration of O3 in O2 is between approximately 13 and 20% by weight;
• heating the deposition chamber to greater than approximately 480 degrees C.;
• depositing silicon dioxide using an organometallic precursor onto the semiconductor device;
• and
• reflowing, after the deposition step, at the temperature of at least approximately 907 degrees C.