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US 6,441,464 B1Granted
Gate oxide stabilization by means of germanium components in gate conductor
AssigneeInternational Business Machines Corporation
InventorsSteven J. Holmes, Mark Charles Hakey, Toshiharu Furukawa, David Vaclav Horak
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Abstract
A semi-conductor device includes a silicon substrate. A gate oxide dielectric layer is on the silicon substrate. A gate conductor includes a relatively thin layer of germanium on the dielectric layer. A relatively thick layer of gate conductor material is provided on the layer of germanium. Incorporating germanium at the gate conductor interface with the gate oxide stabilizes the gate oxide by providing a means of drawing charge trapping sites away from the oxide.
Claims16
A semiconductor device comprising:
- a silicon substrate;
- a gate dielectric layer on the silicon substrate;
- and
- a gate conductor including a relatively thin layer of germanium on the dielectric layer, and a relatively thick layer of gate conductor material on the layer of germanium.
1 more element
A field effect transistor comprising:
- a silicon substrate;
- a gate oxide dielectric layer on the silicon substrate;
- and
- a gate conductor including a relatively thin layer of germanium silicide on the dielectric layer, and a relatively thick layer of gate conductor material on the layer of germanium silicide.
1 more element
Dependencies are inferred from the claim text.