Semiconductor device having a nitride barrier for preventing formation of structural defects
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsNaoki Tsuji, Kiyoteru Kobayashi
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Abstract
Providing a method of producing a semiconductor device and a structure of the semiconductor device employing a trench isolation structure for isolating semiconductor elements wherein volumetric expansion of a trench-filling material due to oxidation process after forming the trench isolation structure is controlled thereby making it possible to prevent deterioration of the electrical characteristics of the semiconductor device. A nitriding treatment is applied to the trench surface of the silicon substrate after forming the trench by etching, thereby to form a thin nitride layer having a better effect of preventing oxidation in the interface of silicon.
Claims11
A semiconductor device, comprising:
- (a) substrate having a surface, said surface being formed with a groove to define a first region on one side of said groove and a second region on the opposite side of said groove;
- (b) first and second transistors provided in said first and second region, respectively,
- each of said first and second transistors having a gate oxidation film provided on said surface, a gate electrode provided on said gate oxidation film, and impurity-doped source/drain layers positioned on either side of said gate electrode and between said substrate and gate oxidation film;
- (c) an insulator in said groove;
- and
- (d) a nitride layer contacting the impurity-doped source/drain layer and positioned on a surface of said groove separating said insulator from a surface of said groove.
A semiconductor device comprising:
- a substrate having a groove defining a first region on one side of the groove and a second region on an opposite side of the groove;
- at least one transistor formed in at least one of the first region and the second region, the at least one transistor having a first impurity-doped source/drain region laterally spaced from a second impurity-doped source/drain region by an intermediate region;
- a nitride barrier contacting the impurity-doped source drain region and overlying the groove;
- and
- a dielectric layer overlying the nitride barrier and composed at least partially of an oxidizing agent.
Dependencies are inferred from the claim text.