Back to results
US 6,441,426 B1Granted
Nonvolatile semiconductor memory device and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsAtsushi Fukumoto, Natsuo Ajika
Life of this patent
Estimating the term…
Abstract
In a semiconductor substrate surface, first and second trenches extending in parallel with each other in a bit line direction are provided. An insulation film for trench isolation is filled in the first and second trenches. A floating gate is provided between the first and second trenches on the semiconductor substrate. A sidewall spacer is provided on a sidewall surface, extending in the bit line direction, of the floating gate.
Claims6
A nonvolatile semiconductor memory device, comprising:
- a semiconductor substrate;
- first and second trenches provided in a surface of said semiconductor substrate and extending in parallel with each other in a bit line direction;
- an oxide film for trench isolation filled in said first and second trenches;
- a floating gate provided between said first and second trenches on said semiconductor substrate;
- and
- a sidewall spacer provided on a sidewall surface, extending in the bit line direction, of said floating gate, said sidewall spacer being formed of a conductive layer including silicon, wherein
- said conductive layer including silicon includes an n type impurity.
4 more elements
A nonvolatile semiconductor memory device, comprising:
- a semiconductor substrate;
- first and second trenches provided in a surface of said semiconductor substrate and extending in parallel with each other in a bit line direction;
- an oxide film for trench isolation filled in said first and second trenches;
- a floating gate provided between said first and second trenches on said semiconductor substrate;
- and
- a sidewall spacer provided on a sidewall surface, extending in the bit line direction, of said floating gate and on said oxide film for trench isolation, said sidewall spacer being formed of a conductive layer including silicon, wherein
- said conductive layer including silicon includes an n type impurity.
4 more elements
Dependencies are inferred from the claim text.