Semiconductor device and method of fabricating the same
AssigneeMatsushita Electronics Corporation
InventorsYoshihisa Nagano, Yasuhiro Uemoto
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Abstract
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
Claims7
A semiconductor device comprising:
- a protective insulating film deposited on a semiconductor substrate having first and second field-effect transistors formed thereon;
- a capacitor composed of a capacitor lower electrode, a capacitor insulating film made of an insulating metal oxide, and a capacitor upper electrode which are formed in upwardly stacked relationship on the protective insulating film,
- wherein an edge portion of the capacitor upper electrode is formed onto the protective insulating film;
- a first contact plug formed in the protective insulating film to provide a direct connection between an impurity diffusion layer serving as a source or drain region of the first field-effect transistor and the capacitor lower electrode;
- a second contact plug formed in the protective insulating film to provide a direct connection between an impurity diffusion layer serving as a source or drain region of the second field-effect transistor and the edge portion of the capacitor upper electrode;
- and
- a hydrogen barrier film entirely covering the capacitor upper electrode.
Dependencies are inferred from the claim text.