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AssigneeLSI Logic Corporation
InventorsGregory A. Johnson, Kunal Taravade, Gayle Miller
Estimating the term…
An integrated circuit includes a vertical-interdigitated capacitor located between an upper interconnect layer and a lower interconnect layer. Both interconnect layers include conductors formed of a metal capable of atom diffusion or ion migration, such as copper. The capacitor plates contact an interconnect layer conductor to create barrier layers to prevent atom diffusion or ion migration from the conductors at the contact locations. Additional barrier layers contact the conductors at locations other than where the capacitor plate portions contact the conductors, and the additional barrier layers are preferably formed of the same material and at the same time that one of the plates is formed. The integrated circuit may include a via plug interconnect extending between conductors of upper and lower interconnect layers, with a plug barrier layer surrounding the plug material to prevent atom diffusion or ion migration from the plug material.
In an integrated circuit (IC) having upper interconnect layer and a lower interconnect layer in which each interconnect layer comprises a conductor formed of a metal capable of atom diffusion or ion migration, an improved capacitor located between the upper and lower interconnect layers comprising:
In an integrated circuit (IC) having upper interconnect layer and a lower interconnect layer in which each interconnect layer comprises a conductor formed of a metal capable of atom diffusion or ion migration, an improved capacitor located between the upper and lower interconnect layers comprising:
In an integrated circuit (IC) having upper interconnect layer and a lower interconnect layer in which each interconnect layer comprises a conductor formed of a metal capable of atom diffusion or ion migration, an improved capacitor located between the upper and lower interconnect layers comprising:
In an integrated circuit (IC) having upper interconnect layer and a lower interconnect layer in which each interconnect layer comprises a conductor formed of a metal capable of atom diffusion or ion migration, an improved capacitor located between the upper and lower interconnect layers comprising:
Dependencies are inferred from the claim text.