Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same
AssigneeSharp Laboratories of America, Inc.
InventorsFengyan Zhang, Yanjun Ma, Jer-Shen Maa, Wei-Wei Zhuang, Sheng Teng Hsu
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Abstract
A thin film structure includes a substantially single-phase, c-axis PGO film on an insulator for use in metal ferroelectric insulator semiconductor single transistor non-volatile memory applications. The PGO on insulator structure can also be used in capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. In a preferred embodiment, the PGO film is deposited on a Zirconium Oxide insulator layer.
Claims13
A metal ferroelectric insulator semiconductor field effect transistor comprising:
- a semiconductor including a source region, a drain region and a gate region positioned therebetween;
- a layer of insulator material positioned on said gate region of said semiconductor;
- and
- a layer of PGO positioned on said layer of insulator material in said gate region of said semiconductor.
A thin film semiconductor structure comprising:
- a substrate including an active region positioned between a source region and a drain region;
- a layer of Zirconium Oxide positioned on said active region of said substrate;
- and
- a ferroelectric layer of substantially single phase, c-axis oriented PGO positioned on said Zirconium Oxide layer.
Dependencies are inferred from the claim text.