Unit pixel of CMOS image sensor with capacitor coupled photodiode
AssigneeHynix Semiconductor Inc.
InventorsHoon-Sang Oh, Jin-Su Han
Life of this patent
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Abstract
A unit pixel in a CMOS image sensor, which enhances a capacitance of a photodiode to reduce noises and increase the maximum output signal of the image sensor, is provided. To achieve this, the CMOS image sensor includes a photodiode aligned with an edge of an insulating film for separating elements and formed by doping impurities to a semiconductor layer by an ion implantation; and a capacitor formed along with interface between the photodiode and the insulating film on plan and formed by layering a bottom electrode, a dielectric and an upper electrode contacted with the photodiode.
Claims10
A complementary metal oxide semiconductor (CMOS) image sensor, comprising:
- a photodiode formed in a semiconductor layer;
- and
- a capacitor having a bottom electrode contacting the photodiode, a dielectric layer formed on the bottom electrode and an upper electrode formed on the dielectric layer.
A complementary metal oxide semiconductor (CMOS) image sensor, comprising:
- a semiconductor layer with an insulting film for isolating elements;
- a transistor including a gate electrode on the semiconductor layer;
- a photodiode formed in the semiconductor layer and aligned along an edge of the insulting film and to one side of the gate electrode;
- and
- a capacitor having a bottom electrode contacting the photodiode, a dielectric layer on the bottom electrode and an upper electrode formed on the dielectric layer.
Dependencies are inferred from the claim text.