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US 6,441,410 B2Granted
MOSFET with lateral resistor ballasting
AssigneeInternational Business Machines Corporation
InventorsRobert J. Gauthier, Jr., Randy W. Mann, Steven H. Voldman
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Abstract
The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source/drain regions adjacent the conduction channel. A distributed resistance is formed by inhibiting conversion of a region of deposited salicide from a high resistance phase state to a low resistance phase state through formation of the deposit with a width or area less than a critical dimension.
Claims10
A field effect transistor including
- a gate structure,
- a conduction channel,
- source/drain regions on opposite sides of said gate structure adjacent said conduction channel,
- a contact of relatively low resistance salicide located on a first portion of a said source/drain region, and
- a region of relatively high resistance salicide located on a second portion of a said source/drain region adjacent an end of said conduction channel.
2 more elements
Dependencies are inferred from the claim text.