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US 6,441,408 B2Granted
Power semiconductor component for high reverse voltages
AssigneeInfineon Technologies AG
InventorsAlfred Porst, Helmut Strack, Anton Mauder, Hans-Joachim Schulze, Heinrich Brunner, Josef Bauer, Reiner Barthelmess
Life of this patent
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Abstract
A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.
Claims25
A power semiconductor component, comprising:
- an n-doped silicon layer;
- a first main area and a second main area;
- a plurality of doped layers introduced into said n-doped silicon layer between said first main area and said second main area;
- said doped layers, as seen from said second main area, including a p-doped anode zone and an n-doped stop layer adjoining said p-doped anode zone;
- said n-doped silicon layer having a first dopant concentration, said n-doped stop layer having a second dopant concentration higher than said first dopant concentration, said n-doped stop layer adjoining and completely covering said n-doped silicon layer;
- said n-doped stop layer being doped with at least one dopant having at least one donor level between a valence band edge of silicon and a conduction band edge of silicon and the at least one donor level being more than 200 meV away from the conduction band edge of silicon, to form said n-doped stop layer non-epitaxially and without lengthy deep diffusion;
- a cathode assigned to said first main area and formed by a first metallization layer;
- and
- an anode formed by a second metallization layer covering said second main area.
6 more elements
A power semiconductor component, comprising:
- an n-doped silicon layer;
- a first main area and a second main area;
- a plurality of doped layers introduced into said n-doped silicon layer between said first main area and said second main area;
- said doped layers, as seen from said second main area, including an anode zone, said n-doped silicon layer adjoining said anode zone, a stop layer adjoining said n-doped silicon layer, and an n-doped cathode zone adjoining said stop layer;
- said n-doped silicon layer having a first dopant concentration, said stop layer having a second dopant concentration higher than said first dopant concentration, said stop layer completely covering said n-doped silicon layer;
- said stop layer being doped with at least one dopant having at least one donor level between a valence band edge of silicon and a conduction band edge of silicon and the at least one donor level being more than 200 meV away from the conduction band edge of silicon, to form said n-doped stop layer non-epitaxially and without lengthy deep diffusion;
- a cathode assigned to said first main area and formed by a first metallization layer;
- and
- an anode formed by a second metallization layer covering said second main area.
6 more elements
A semiconductor component, comprising:
- a MISFET having a source, a drain, and a parasitic diode;
- said parasitic diode being reverse-connected in parallel from said source to said drain and said parasitic diode including:
- an n-doped silicon layer;
- a first main area and a second main area;
- a plurality of doped layers introduced into said n-doped silicon layer between said first main area and said second main area;
- said doped layers, as seen from said second main area, including an anode zone, said n-doped silicon layer adjoining said anode zone, and a stop layer adjoining said n-doped silicon layer;
- said n-doped silicon layer having a first dopant concentration, said stop layer having a second dopant concentration higher than said first dopant concentration, said stop layer completely covering said n-doped silicon layer;
- said stop layer being doped with at least one dopant having at least one donor level between a valence band edge of silicon and a conduction band edge of silicon and the at least one donor level being more than 200 meV away from the conduction band edge of silicon, to form said n-doped stop layer non-epitaxially and without lengthy deep diffusion;
- a cathode assigned to said first main area and formed by a first metallization layer;
- and
- an anode formed by a second metallization layer covering said second main area.
8 more elements
Dependencies are inferred from the claim text.