Semiconductor device

Abstract

In order that the threshold value of a cell separated from an emitter wire bonding portion (W1, W2) be larger than that of a cell immediately below the emitter wire bonding portion, the area of a diffusion layer (8a) of a cell separated from the wire bonding portion is made larger than that of a diffusion layer (8) for connecting an emitter electrode (2) and a base region (7) in a cell immediately below the wire bonding portion. This allows a hole current to be discharged outside via an emitter wire within a short time period, without adversely affecting the operating characteristics and the steady loss, in a position where this hole current readily remains upon turn-off in a conventional IGBT. This shortens the fall time and reduces the switching loss.

Dependencies are inferred from the claim text.