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US 6,441,393 B2Granted
Semiconductor devices with selectively doped III-V nitride layers
AssigneeLumileds Lighting U.S., LLC
InventorsWerner Goetz, R. Scott Kern
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Abstract
A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.
Claims13
A light emitting device comprising:
- a substrate;
- a buffer layer overlying said substrate, said buffer layer deposited at temperature about 500 C.;
- an n-doped III-V first contact nitride layer overlying said substrate and doped with a first dopant;
- an n-doped III-V stress reducing conductive second nitride layer overlying said first contact nitride layer and doped with a second dopant, said second dopant being different from said first dopant, said first dopant, said first dopant and said second dopant being selected from the group consisting of silicon, germanium, tin, or a combination thereof, and having a concentration between 1019 cm−3 and 1020 cm−3 in one of said first and second nitride layers, said second nitride layer having a thickness between 100 nanometers and 10,000 nanometers
- an active layer overlying said second nitride layer;
- and
- a p-doped III-V third nitride layer overlying said active layer, doped with at least one element selected from the group consisting of magnesium, beryllium, zinc, and cadmium.
4 more elements
A light emitting device, comprising:
- a substrate;
- a buffer layer overlying said substrate, said buffer layer deposited at temperatures about 500 C.;
- an n-doped III-V first stress reducing conductive nitride layer overlying said substrate and doped with a dopant, said dopant selected from the group consisting of silicon, germanium, tin, and a combination thereof, wherein
- the concentration of said dopant changes with the distance from said substrate between 1019 cm−3 and 1020 cm−3;
- and
- the thickness of said first nitride layer is between 100 nanometers and 10,000 nonometers;
- an active layer positioned over said n-doped III-V first nitride layer;
- and
- a p-doped III-V second nitride layer overlying said active layer, doped with at least one element selected from the group consisting of magnesium, beryllium, zinc, and cadmium, wherein the in-plane lattice constant of said first nitride layer is substantially matched with the lattice constant of one of said active layer and said second nitride layer.
6 more elements
Dependencies are inferred from the claim text.