Solar cell and method of manufacturing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakuya Satoh, Takayuki Negami, Shigeo Hayashi, Yasuhiro Hashimoto, Shinichi Shimakawa
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Abstract
A solar cell with good characteristics and high reliability is provided that includes a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb. A method of manufacturing the same also is provided. The solar cell includes a conductive base, a first insulating layer formed on one principal plane of the base, a second insulating layer formed on a second principal plane of the base, and a light-absorption layer disposed above the first insulating layer. The light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.
Claims22
A solar cell, comprising:
- a flexible conductive base;
- a first insulating layer formed on one principal plane of the flexible conductive base;
- a second insulating layer formed on a second principal plane of the flexible conductive base;
- and
- a light-absorption layer disposed above the first insulating layer,
- wherein the light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.
A solar cell, comprising:
- a flexible conductive base;
- an insulating layer formed on the flexible conductive base;
- a conductive layer formed on the insulating layer;
- and
- a light-absorption layer disposed above the conductive layer,
- wherein at least one layer disposed between the flexible conductive base and the light-absorption layer comprises a group Ia element, and
- the light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.
A method of manufacturing a solar cell with a flexible conductive base, comprising:
- (i) forming, on the flexible conductive base, a multilayer film including a conductive layer and a layer comprising a group la element;
- and
- (ii) forming, on the multilayer film, a light-absorption layer formed of a conductor comprising at least one element from each of groups Ib, IIIb, and VIb.
Dependencies are inferred from the claim text.