Method of fabricating thermoelectric device

A method of fabricating a thermoelectric device comprising:

• a first grooving process applied to two n-type thermoelectric semiconductor composite blocks prepared by bonding an n-type thermoelectric semiconductor block to a base, respectively, and two p-type thermoelectric semiconductor composite blocks prepared by bonding a p-type thermoelectric semiconductor blocks to a base, respectively, for forming a plurality of grooves at a same pitch, and to a depth close to the interface between the respective thermoelectric semiconductor blocks and the base thereof, in the n-type thermoelectric semiconductor block and the p-type thermoelectric semiconductor block, respectively;
• a first fitting process of fitting the two pairs of the n-type thermoelectric semiconductor composite block and the p-type thermoelectric semiconductor composite block, with the grooves formed therein, respectively, by said first grooving process to each other, respectively, such that respective grooved surfaces face each other;
• a first adhesion process of forming two integrated blocks by adhering the two pairs of the n-type thermoelectric semiconductor composite blocks and p-type thermoelectric semiconductor composite blocks to each other, respectively, by filling gaps in fitting parts between the respective n-type thermoelectric semiconductor composite blocks and p-type thermoelectric semiconductor composite blocks, fitted to each other by said first fitting process, with adhesive insulation members;
• a base removing process of removing one of the bases before a second grooving process;
• the second grooving process of forming two grooved integrated blocks by forming a plurality of grooves at a same pitch in the two integrated blocks formed, respectively, by said first adhesion process, in the direction crossing the direction of the grooves formed by said first grooving process, and to a depth close to an interface between the respective thermoelectric semiconductor blocks and the base thereof;
• a second fitting process of fitting the two grooved integrated blocks to each other such that respective grooved surfaces face each other;
• a second adhesion process of forming a second integrated block by adhering the two grooved integrated blocks, fitted to each other by said second fitting process, to each other by filling gaps in fitting parts between the two grooved integrated blocks with adhesive insulation members;
• and
• a thermoelectric semiconductor pieces exposure process of exposing n-type and p-type thermoelectric semiconductor pieces by removing the respective bases of the second integrated block.