Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof
AssigneeThe BOC Group, Inc.
InventorsQing Min Wang, Ce Ma
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Abstract
Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si—O—C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (—O—R1—O—)SiR2R3 or the formula (—R1—O—)SiR2R3.
Claims15
A method for fabricating a dielectric film having low-k values on a semiconductor or integrated circuit surface comprising applying to said surface a Si—O—C-in-ring cyclic siloxane precursor wherein said precursor reacts with and deposits on said surface thereby forming said dielectric film.
Dependencies are inferred from the claim text.