Masking layer method for forming a spacer layer with enhanced linewidth control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBor-Wen Chan, Mei-Ru Kuo
Life of this patent
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Abstract
Within a method for forming a spacer layer, there is first provided a substrate having formed thereover a topographic feature in turn having formed thereover a second microelectronic layer formed of a second material having a second thickness in turn having formed thereover a first microelectronic layer formed of a first material having a first thickness. Within the method, the first material serves as an etch stop for second material and the first thickness is less than the second thickness. The first microelectronic layer and the second microelectronic layer are then successively etched to ultimately form a spacer layer with enhanced dimensional control.
Claims14
A method for forming a spacer layer comprising:
- providing a substrate;
- forming over the substrate a topographic feature;
- forming conformally over the topographic feature a second microelectronic layer formed of a second material having a second thickness;
- forming conformally upon the second microelectronic layer a first microelectronic layer formed of a first material having a first thickness, where the first material serves as an etch stop for the second material and the first thickness is less than the second thickness;
- etching, while employing a first anisotropic etch method, the first microelectronic layer to form a spacer mask layer upon the second microelectronic layer;
- and
- etching, while employing a second anisotropic etch method selective to the second material, the second microelectronic layer to form a spacer layer while employing the spacer mask layer as an etch mask layer.
A method for forming a spacer layer comprising:
- providing a semiconductor substrate;
- forming over the semiconductor substrate a gate electrode;
- forming conformally over the gate electrode a second microelectronic layer formed of a second material having a second thickness;
- forming conformally upon the second microelectronic layer a first microelectronic layer formed of a first material having a first thickness, where the first material serves as an etch stop for the second material and the first thickness is less than the second thickness;
- etching, while employing a first anisotropic etch method, the first microelectronic layer to form a spacer mask layer upon the second microelectronic layer;
- and
- etching, while employing a second anisotropic etch method selective to the second material, the second microelectronic layer to form a spacer layer while employing the spacer mask layer as an etch mask layer.
Dependencies are inferred from the claim text.