High throughput plasma resist strip process for temperature sensitive applications
AssigneeAdvanced Micro Devices, Inc.
InventorJeffrey A. Shields
Life of this patent
Estimating the term…
Abstract
The invention relates to the field of manufacturing semiconductor devices, particularly processes directed to resist removal. In the method of the invention, the wafer temperature is maintained below approximately 210° C. to 220° C. to prevent residue formation, by controlling the temperature of a platen or paddle adjancent a wafer to be less than about 210° C. throughout plasma stripping of a resist layer disposed on the wafer. Moreover, to achieve a suitable yield and throughput at these temperatures, the flow rate of an additive to gases supplied to a plasma chamber to create an O2 plasma is controlled to thereby control and improve a resist striprate at these temperatures.
Claims13
A method for manufacturing a semiconductor device, comprising:
- controlling the temperature of a platen or paddle adjacent a wafer to be greater than 60° C. and less than 180° C.;
- plasma stripping a resist layer disposed on the wafer;
- maintaining the temperature of the platen or paddle greater than 60° C. and below 180° C. throughout the stripping of the resist layer;
- and
- controlling the flow rate of an additive to gases supplied to a plasma chamber to create an O2 plasma to control a resist striprate;
- wherein the additive consists of CF4;
- and
- wherein the additive comprises about 3% of a total flow rate of gases supplied to a plasma chamber.
A method for manufacturing a semiconductor device, comprising:
- controlling the temperature of a platen or paddle adjacent a wafer to be less than about 210° C.;
- plasma stripping a resist layer disposed on the wafer;
- while maintaining the temperature of the platen or paddle below about 210° C. throughout the stripping of the resist layer;
- controlling the flow rate of an additive to gases supplied to a plasma chamber to create an O2 plasma to control a resist striprate, and
- wherein the additive consists of CF4,
- wherein the additive comprises about 3% of a total flow rate of gases supplied to a plasma chamber,
- wherein the gases supplied to the plasma chamber further comprise H2O, and
- wherein the H2O flow rate comprises about 10% of an O2 flow rate
- wherein the O2 flowrate is approximately 600 sccm.
A method for manufacturing a semiconductor device, comprising:
- controlling the temperature of a platen or paddle adjacent a wafer to be greater than 60° C. and less than 180° C.;
- plasma stripping a resist layer disposed on the wafer;
- maintaining the temperature of the platen or paddle greater than 60° C. and below 180° C. throughout the stripping of the resist layer;
- and
- controlling the flow rate of an additive to gases supplied to a plasma chamber to create an O2 plasma to control a resist striprate;
- wherein the additive consists of CF4;
- and
- wherein the resist layer is disposed over a metal layer.
A method of stripping a resist from a semiconductor wafer, comprising:
- controlling the temperature of a platen or paddle adjacent a wafer to be less than 180° C.;
- plasma stripping a resist layer disposed on the wafer;
- maintaining the temperature of the platen or paddle below 180° C. throughout the stripping of the resist layer;
- controlling the flow rate of CF4 to gases supplied to a plasma chamber to create an O2plasma to control a resist striprate at low temperatures;
- and
- maintaining a striprate greater than approximately 18×103 Å/min, and
- wherein the CF4 flow rate comprises about 3% of a total flow rate of the gases supplied to the plasma chamber to create the O2 plasma.
A method of stripping a resist from a semiconductor wafer, comprising:
- controlling the temperature of a platen or paddle adjacent a wafer to be less than 180° C.;
- plasma stripping a resist layer disposed on the wafer;
- maintaining the temperature of the platen or paddle below 180° C. throughout the stripping of the resist layer;
- controlling the flow rate of CF4 to gases supplied to a plasma chamber to create an O2plasma to control a resist striprate at low temperatures;
- and
- maintaining a striprate greater than approximately 18×103 Å/min, and wherein the resist layer is disposed over a metal layer.
Dependencies are inferred from the claim text.