Gas assisted method for applying resist stripper and gas-resist stripper combinations
AssigneeMicron Technology, Inc.
InventorTerry L. Gilton
Life of this patent
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Abstract
A method for moving resist stripper across the surface of a semiconductor substrate. The method includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.
Claims98
A method for removing photoresist from a semiconductor device structure, comprising:
- applying a quantity of ozonated water to the photoresist so as to form a layer of ozonated water on the photoresist;
- and
- directing at least one gas other than ozone toward the semiconductor device structure so as to move said layer of ozonated water across the photoresist.
A method for facilitating the removal of reactants generated during a resist strip with a stripper comprising ozone, said method comprising:
- applying a quantity of the stripper comprising ozone to resist on a surface of a semiconductor device structure;
- and
- directing a quantity of at least one gas other than ozone toward the stripper.
A method for preventing macroscopic drops of a resist stripper including a gaseous component comprising ozone from forming over a surface of a semiconductor device structure, comprising directing at least one gas other than ozone at least partially across resist stripper located over the semiconductor device structure.
A method for substantially continuously moving resist stripper that includes a gaseous component comprising ozone laterally over a surface of a semiconductor device structure, comprising directing at least one gas other than ozone at least partially toward the resist stripper.
A method for substantially continuously supplying a thin layer of a resist stripper including a gaseous component comprising ozone over a surface of a semiconductor device structure, comprising:
- applying the resist stripper to the surface of the semiconductor device structure and in contact with a resist on the semiconductor device structure;
- and
- directing at least one gas other than ozone at least partially toward a layer comprising the resist stripper so as to decrease a thickness of said layer.
A system for removing resist from a semiconductor device structure, comprising:
- a source of resist stripper, said resist stripper including a gaseous component comprising ozone;
- an applicator in communication with said source and configured to apply a quantity of said resist stripper to the resist;
- a gas source of at least one gas other than ozone;
- and
- a gas output element in communication with said gas source and configured to direct said at least one gas at least partially over the resist.
In combination, a resist stripper including a gaseous component comprising ozone and at least one gas other than ozone under pressure so as to cause movement of reaction products away from a surface of a semiconductor device structure.
A method for facilitating the removal of reactants from over a surface of a semiconductor device structure as a resist is being removed therefrom, comprising:
- applying a resist stripper including a gaseous component comprising ozone to the resist;
- and
- directing a quantity of at least one gas other than ozone at least partially toward the resist stripper.
Dependencies are inferred from the claim text.