Substrate cleaning process
AssigneeApplied Materials, Inc.
InventorsThomas J. Kropewnicki, Jeremiah T. Pender, Henry Fong, Charles Peter Auglis, Raymond Hung, Hongqing Shan
Life of this patent
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Abstract
A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH3. In one version, the process gas is introduced to remove residue 60 and resist material 50 from the substrate and to remove residue from surfaces in the process chamber 75.
Claims46
A substrate cleaning method comprising:
- exposing a substrate to an energized process gas to remove residue and resist material from the substrate, the process gas comprising cleaning gas and an additive gas comprising NH3;
- and
- applying a bias to the substrate.
A substrate processing method comprising:
- providing a substrate having a dielectric material;
- exposing the substrate to an energized process gas comprising etchant gas to etch the dielectric material;
- and
- exposing a substrate to an energized process gas to remove residue and resist material from the substrate, the process gas comprising cleaning gas and an additive gas comprising NH3.
A method of processing a substrate, the method comprising:
- providing a substrate having a dielectric material and an overlying resist material;
- exposing the substrate to an energized process gas comprising etchant gas to etch the dielectric material, thereby forming etchant residue on the substrate;
- and
- exposing the substrate to an energized process gas comprising cleaning gas and NH3 to remove a majority of the etchant residue or resist material.
A substrate cleaning method comprising:
- exposing a substrate to an energized process gas to remove residue and resist material from the substrate, the process gas comprising cleaning gas;
- and
- applying a bias to the substrate.
A substrate processing method comprising:
- providing a substrate having a dielectric material and an overlying resist material, in a process chamber;
- providing an energized process gas in the process chamber, the energized process gas comprising etchant gas to etch the dielectric material, thereby forming etchant residue on the substrate and on surfaces in the chamber;
- and
- providing an energized process gas comprising cleaning gas in the process chamber to remove etchant residue from the surfaces in the chamber and to remove the etchant residue and resist material from the substrate.
A substrate cleaning method comprising:
- providing a substrate in a process chamber;
- and
- providing an energized process gas comprising cleaning gas and a nitrogen-containing gas to remove residue from the substrate and from the surfaces in the chamber, wherein the volumetric flow ratio of nitrogen-containing gas to cleaning gas is less than about 1:1.
A substrate processing method comprising:
- providing a substrate having a dielectric material and an overlying resist material, in a chamber;
- providing an energized etchant gas in the chamber to etch the dielectric material, thereby forming etchant residue;
- and
- providing an energized process gas to remove etchant residue and resist material from the substrate and to remove etchant residue from surfaces of the chamber, the process gas comprising cleaning gas and an additive gas comprising NH3.
Dependencies are inferred from the claim text.