Method of processing surface of workpiece and method of forming semiconductor thin layer
AssigneeSony Corporation
InventorsYoshihiro Miyazawa, Shuzo Sato
Life of this patent
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Abstract
In a workpiece surface processing method and a semiconductor thin layer forming method, a reference plane (12) is set in a workpiece, the reference plane (12) is controlled to a desired shape, and then the material constituting the workpiece is removed from the surface of the workpiece (10) toward the reference plane (12) is removed. The surface processing of the workpiece can be performed with high precision while not being dependent on the thickness precision of the workpiece before the surface processing.
Claims8
A surface processing method for a workpiece, comprising the steps of:
- setting a reference plane in the workpiece;
- controlling a shape of said reference plane to a planar shape by deforming the workpiece;
- and then
- removing material constituting the workpiece from the surface of the workpiece toward said reference plane.
A semiconductor thin layer forming method comprising the steps of:
- bonding the surface of a first semiconductor wafer and the surface of a second semiconductor wafer to each other to form a composite;
- controlling a shape of a reference plane which is set in one of said first semiconductor wafer and said second semiconductor wafer to have a planar shape by deforming the composite;
- and then
- removing said first semiconductor wafer from the back surface of said first semiconductor wafer toward said reference plane to form a semiconductor thin layer from the residual first semiconductor wafer.
Dependencies are inferred from the claim text.