Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low k, dual damascene interconnect integration
AssigneeNational Semiconductor Corporation
InventorsSudhakar Allada, Chris Foster
Life of this patent
Estimating the term…
Abstract
Disclosed are multilevel interconnects for integrated circuit devices, especially copper/dual damascene devices, and methods of fabrication. Methylated-oxide type hardmasks are formed over polymeric interlayer dielectric materials. Preferably the hardmasks are materials having a dielectric constant of less than 3 and more preferably 2.7 or less. Advantageously, both the hardmask and the interlayer dielectric can be spincoated.
Claims6
A multilevel interconnect structure for an integrated circuit device formed in a semiconductor substrate structure, the structure comprising:
- a first dielectric layer formed over the integrated circuit device, the first dielectric layer having a dielectric constant less than three;
- a first patterned methylated oxide hardmask formed on the first dielectric layer, the first methylated oxide hardmask defining an opening in the first dielectric layer;
- and
- conductive material formed in the opening.
The structure of claim, and further comprising:
- a diffusion barrier layer over the integrated circuit device, the first dielectric layer being formed on the diffusion barrier layer.
Dependencies are inferred from the claim text.