Semiconductor device with copper wiring and its manufacture method

A method for manufacturing a semiconductor device comprising the steps of:

• forming a copper wiring layer, embedding a trench formed in an insulating film;
• removing said copper wiring layer on said insulating film to leave a copper wiring only in said trench, the copper wiring layer having a top surface recessed from that of the insulating film;
• forming an interlayer insulating film having planarizing function on said insulating film, covering said copper wiring wherein said planarizing function forms a substantially planar surface on a stepped surface;
• and
• forming another copper wiring layer on said interlayer insulating film having planarizing function, wherein each of said steps of forming said copper wiring layer and said another copper wiring layer includes sputtering a barrier layer made of at least one material selected from the group consisting of TiN, TaN, WN, TiSiN, TiSi and TiW, and sputtering a copper or copper alloy on the barrier layer,
• wherein said step of forming an interlayer insulating film includes the sub-steps of:
• applying a liquefied insulating film;
• and
• depositing a silicon oxide film having a low dielectric constant.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a copper wiring in a trench of an insulation film, the copper wiring having a top surface recessed from that of the insulation film;
• reducing an oxide film on a surface of said copper wiring by heating said copper wiring to a temperature in a range of 250° C.-450° C. in reductive gas or by treating said copper wiring in plasma of reductive gas;
• forming a film of a material not containing oxygen on said copper wiring without exposing said copper wiring to external atmosphere, and
• forming an interlayer insulating film having planarizing function on said insulating film, covering said copper wiring, wherein said planarizing function forms a substantially planar surface on a stepped surface;
• wherein the step of forming a copper wiring includes the steps of forming a barrier layer made of at least one material selected from the group consisting of TiN, TaN, WN, TiSiN, TiSi of and TiW, and forming a copper or copper alloy on the barrier layer by sputtering.

A method for manufacturing a semiconductor device comprising the steps of:

• forming an interlayer insulating film having planarizing function on an insulating film, covering a copper wiring, wherein said copper wiring has a top surface recessed from that of the insulating film, and said planarizing function forms a substantially planar surface on a stepped surface;
• forming a connection hole in said insulating film formed on said copper wiring;
• reducing an oxide film on a surface of said copper wiring by heating said copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating said copper wiring in plasma of reductive gas;
• then, depositing a metal layer for connection on said copper wiring without exposing said copper wiring to external atmosphere;
• sputtering a barrier layer made of at least one material selected from the group consisting of TiN, TaN, WN, TiSiN, TiSi and TiW;
• and
• sputtering a copper or copper alloy on the barrier layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming an interlayer insulating film having planarizing function on an insulating film, covering a copper wiring, wherein said copper wiring has a top surface recessed from that of the insulating film, and said planarizing function forms a substantially planar surface on a stepped surface;
• forming a connection hole in the interlayer insulating film formed on the copper wiring;
• reducing an oxide film on a surface of said copper wiring by heating said copper wiring to a temperature in a range from 250° C. to 450° C. under reductive gas or by treating said copper wiring in plasma of reductive gas;
• and
• then, depositing a metal layer, to fill the connection hole on said copper wiring.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a copper wiring layer, embedding a trench formed in an insulating film;
• removing said copper wiring layer on said insulating film to leave a copper wiring only in said trench, the copper wiring layer having a top surface recessed from that of the insulating film;
• forming an interlayer insulating film having a planarizing function on said insulating film, covering said copper wiring wherein said planarizing function forms a substantially planar surface on a stepped surface;
• and
• forming another copper wiring layer on said interlayer insulating film having a planarizing function, wherein each of said steps of forming said copper wiring layer and said another copper wiring layer includes sputtering a barrier layer made of at least one material selected from the group consisting of TiN, TaN, WN, TiSiN, TiSi and TiW, and sputtering a copper or copper alloy on the barrier layer,
• wherein said interlayer insulating film is a liquefied insulating film.