Semiconductor device and method for manufacturing the same

A method of manufacturing semiconductor device which comprises the steps of:

• forming a first insulating film on a semiconductor substrate provided with a conductive layer;
• forming a contact hole through said first insulating film to a depth reaching to said conductive layer;
• forming a substitutive film in an interior of contact hole;
• forming a second insulating film all over an upper surface of the substrate;
• forming a wiring groove in said second insulating film in a manner to connect it with said substitutive film;
• forming a conductive film at a region comprising said contact hole and said wiring groove;
• forming an absorption layer on said conductive film, and filling said interiors of said contact hole and said wiring groove with said conductive film by substituting said conductive film for said substitutive film and by allowing said substitutive film to be absorbed by said absorption layer under a heat treatment;
• and
• removing a compound formed in said process of allowing said substitutive film to be absorbed by said absorption layer, and forming a plug comprising said conductive film in said contact hole as well as a wiring comprising said conductive film in said wiring groove by working said conductive film so as to selectively leave said conductive film in said interiors of said contact hole and said wiring groove.

A method of manufacturing semiconductor device which comprises the steps of:

• forming an insulating film on a semiconductor substrate provided with a conductive layer;
• forming a contact hole through said insulating film to a depth reaching to said conductive layer;
• forming a substitutive film at least in an interior of the said contact hole;
• forming a wiring groove in said insulating film;
• forming a conductive film at a region comprising said contact hole and said wiring groove;
• forming an absorption layer on said conductive film, and filling said interiors of said contact hole and said wiring groove with said conductive film by substituting said conductive film for said substitutive film and by allowing said substitutive film to be absorbed by said absorption layer under a heat treatment;
• and
• removing a compound formed in said process of allowing said substitutive film to be absorbed by said absorption layer, and forming a plug comprising said conductive film in said contact hole as well as a wiring comprising said conductive film in said wiring groove by working said conductive film so as to selectively leave said conductive film in said interiors of said contact hole and said wiring groove.