NiSi contacting extensions of active regions
AssigneeAdvanced Micro Devices, Inc.
InventorMathew S. Buynoski
Life of this patent
Estimating the term…
Abstract
Smaller active regions are enabled by forming nickel suicide extensions from the nickel silicide layers on the source/drain regions and landing contacts on the nickel silicide extensions. The nickel silicide extensions are formed by implanting Si ions in the field oxide areas adjacent to the active regions, prior to depositing Ni, to catalyze the reaction of Ni and Si during annealing to form a nickel silicide layer that extends from the source/drain regions onto the Si-implanted field oxide areas. In an embodiment of the present invention, the nickel silicide is NiSi.
Claims14
A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a silicon gate electrode, having an upper surface and side surfaces, overlying a silicon substrate with a gate dielectric layer therebetween, a sidewall spacer disposed adjacent to each side surfaces of the silicon gate electrode, exposed source/drain regions in the silicon substrate, and field oxide areas in the silicon substrate adjacent to the outer edges of the source/drain regions;
- implanting silicon (Si) ions into the field oxide areas;
- depositing a nickel (Ni) layer;
- heating to react the deposited Ni with underlying Si to form a nickel silicide layer on the silicon gate electrode, nickel suicide layers on the source/drain regions and nickel silicide extensions on the field oxide areas;
- removing unreacted Ni;
- and
- landing a contact on the nickel silicide extensions at a tolerance distance from the silicon gate electrode and a tolerance distance to the end of the nickel silicide extensions.
Dependencies are inferred from the claim text.