Method for producing metal-semiconductor compound regions on semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorQi Xiang
Life of this patent
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Abstract
A method of making metal-semiconductor compound regions, such as silicide regions, includes forming a metal layer on a surface of a semiconductor device, performing a first annealing to form metal-semiconductor regions, and depositing additional metal within and/or underneath the metal-semiconductor regions. The depositing may be accomplished by ion implantation. Following the depositing, a second annealing is performed to recrystallize the metal-semiconductor compounds and/or to increase the size of the metal-semiconductor compound regions.
Claims25
A method of making metal-semiconductor compound regions in a semiconductor device comprising:
- depositing a metal layer on source and drain regions of a transistor;
- annealing the device to form respective source and drain metal-semiconductor compound regions in the source region and the drain region;
- removing unreacted metal of the metal layer;
- and
- implanting metal ions in the source region and the drain region.
A method of making silicide regions in a semiconductor device comprising:
- depositing a metal layer on source and drain regions of a transistor;
- performing a first annealing of the device to form respective source and drain metal-semiconductor compound regions in the source region and the drain region;
- removing unreacted metal of the metal layer;
- depositing additional metal in the source and drain regions;
- and
- performing a second annealing of the device.
Dependencies are inferred from the claim text.