Semiconductor structures, methods of implanting dopants into semiconductor structures and methods of forming CMOS constructions

A method of implanting dopant into a semiconductor structure, comprising:

• providing a semiconductor structure comprising a defined first region and a defined second region adjacent the first region;
• forming a photoresist mask over the first region, the photoresist mask comprising a first lateral dimension;
• implanting a first dopant into the second region;
• after implanting the first dopant, changing the lateral dimension of the photoresist mask without photolithographic processing;
• and
• after changing the lateral dimension of the photoresist mask, implanting a second dopant into the second region while at least some of the photoresist mask remains over the first region.

A method of implanting dopant into a semiconductor structure, comprising:

• providing a semiconductor structure comprising a defined first region and a defined second region adjacent the first region;
• forming a photoresist mask over the first region and implanting a first dopant into the second region;
• and
• after implanting the first dopant, shifting the photoresist mask periphery to a second location without photolithographic processing and subsequently implanting a second dopant into the second region while at least some of the photoresist mask remains over the first region.

A method of forming a CMOS construction, comprising:

• providing a semiconductor structure comprising a first semiconductive material and a second semiconductive material over the first semiconductive material;
• the structure comprising a defined first region and a defined second region adjacent the first region;
• one of the first and second regions being an NMOS region and the other of the first and second regions being a PMOS region;
• forming a mask over the first region and implanting a first conductivity-type dopant into at least one of the first and second semiconductive materials of the second region;
• the mask having a periphery at a first location of the semiconductor structure during the implanting of the first dopant;
• and
• after implanting the first dopant, shifting the mask periphery to a second location and subsequently implanting a second conductivity-type dopant into at least one of the first and second semiconductive materials of the second region while at least some of the photoresist mask remains over the first region;
• one of the first and second conductivity-type dopants being n-type and the other being p-type.

A method of forming a CMOS construction, comprising:

• providing a semiconductor structure comprising a semiconductive material line extending over a semiconductive material substrate;
• the structure comprising a defined first region and a defined second region adjacent the first region;
• the line extending at least partially across both of the first and second regions;
• one of the first and second regions being an NMOS region and the other of the first and second regions being a PMOS region;
• forming a mask over the first region;
• and
• implanting first and second conductivity-type dopants into the second region while the mask is over the first region;
• the first conductivity-type implant being directed primarily into the line, and the second conductivity-type implant being directed primarily into the substrate;
• a lateral periphery of the mask being moved between the implanting of the first and second conductivity-type dopants so that the first conductivity-type dopant is implanted to a different lateral periphery of the line than the second conductivity-type dopant is implanted in the substrate;
• one of the first and second conductivity-type implants being p-type and the other of the first and second conductivity-type implants being n-type.