Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes

A process for preparing a semiconductor device comprising the steps of:

• forming a first layer of substrate material, said substrate material comprising a metal or semiconductor material;
• and
• depositing a second layer comprising elemental boron and a dopant on said first layer, wherein said dopant is selected from the group consisting of phosphorous, nickel, chromium, manganese, iron, cobalt, and ruthenium.

A process for introducing a metal as a dopant in a boron carbide layer deposited onto a suitable substrate comprising the steps of:

• supplying into a chamber that contains the substrate a gaseous mixture of orthocarborane and an organometallic compound comprising the metal;
• energizing the gaseous mixture in the chamber sufficiently to dissociate boron and carbon atoms and metal atoms which combine to form a metal doped boron carbide layer on said substrate.

A process for introducing a phosphorous as a dopant in a boron carbide layer deposited onto a suitable substrate comprising the steps of:

• supplying gaseous dimeric chloro-phospha(III)carborane into a chamber that contains the substrate;
• energizing the gaseous mixture in the chamber sufficiently to dissociate boron, carbon, and phosphorous atoms which combine to form a phosphorous doped boron carbide layer on said substrate.